Sapphire crystal rod is three oxide two aluminum crystal, used to produce sapphire substrate
The application of sapphire crystal rod is the application of sapphire. As long as we know its performance, we can know what aspects of it is applied.
A sapphire is a six square lattice, and many of its properties are determined by its crystal direction. With the growth of the extrapolation film, different crystal direction will match the different crystal lattice with the target material. The sapphire birefringence characteristics, crystal axis is used for some special optical fields, such as: sapphiresubstrate type --c basal polarization section was used for the growth of III-V and II-VI films, such as Gan, application can produce blue LED products, laser diode and infrared detector. The --A type substrate produces a uniform capacitance / medium, and the high insulation is applied to the hybrid microelectronic technology. The superconductor at high temperature can be produced by the A type base long crystal. The different deposited silicon epitaxial long crystals of --R type substrate are applied to microelectronic integrated circuits. Because of its high capacitance, sapphire is the best choice for hybrid substrates, such as applications in microwave integrated circuits. In addition, high speed integrated circuits and pressure sensors can also be formed during the process of extending the silicon growth film. Growth can also be used in the production of R type substrate weight, other superconducting components, high resistance, gaas. --M, A and R can grow gallium nitride, which is nonpolar or semi polar. As a commercial product, sapphire still needs a great deal of research to improve the material quality of gallium epitaxial. Purity: sapphire is an insulating material whose semiconductor properties are changed by doping materials and impurities. Therefore, most of the purity control is not due to the strict control of its base material (silicon, gallium arsenide, indium phosphide). Instead, it changes the optical properties (color and optical conductivity range) of some trace dopants, which is very important for some fields. Because the purity of sapphire is strongly applied to CMOS (complementary metal oxide semiconductor), it has a strong influence on the electrical properties and cross contamination of metal surfaces. Therefore, the application of SoS on sapphire is also critical. It has not yet been shown that the purity of sapphire has an impact on the application of LED, and the SoS manufacturer attributes its characteristics to the sapphire base. Guided mode method (Dingbian membrane feeding): heating / melting flashball flashball into seed / pulling flashball flashball cutting --2 meters in length and 100 mm wide ribbon or 9*26, 12*20 feet huge sapphire plate - Tubular sapphire was more than 65 feet long, or other shapes -- sapphire crystal with different substrate (A, R, C and others) were stretched to different crystal direction, mainly used in industry and machinery manufacturing industry in an inert gas (nitrogen and argon) in the growth rate of 1~5 cm / h -- different crystals can also begin the growth (can sometimes be more than 20)